Abstract
Due to the shortening of channel length in accordance with Moore’s law,
short channel effects degrade transistor performance. This chapter explains the
emerging nanosheet fin field effect transistor (FinFET) design and operation through
technology computer-aided design (TCAD) tool-based design and simulation. A 10 nm
node Ge-channel nanosheet FinFET is designed and simulated by incorporating
quantum transport models in both DC and AC environments. Corresponding short
channel effect (SCE) parameters are obtained and compared with Si-channel nanosheet
FinFETs. Further, device feasibility for low-power and high-frequency applications is
studied.
Keywords: FinFET, Ge-channel, High frequency, Low power, Nanosheet.
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