Abstract
In this study, a SiGe source-based epitaxial layer-encapsulated TFET (SiGe
source ETLTFET) is developed, and the performance of the device is examined by
optimizing various design parameters, including the epitaxial layer thickness (tepi), gateto-source overlap length (Lov), Ge mole fraction, and source doping concentration. The
average subthreshold swing (SSavg) and ON-OFF current ratio are used to evaluate the
device’s performance. The results show a superior performance of SiGe source
ETLTFET compared with its homojunction counterpart. Furthermore, to demonstrate
the possibilities for using the proposed device in a logic circuit, a resistive load inverter
is designed using the n-type ETLTFET.
Keywords: Epitaxial Layer, Inverter, Line Tunneling, Silicon Germanium, TFET.
Related Journals
Related Books
Advanced Materials and Nano Systems: Theory and Experiment - Part 2
Advanced Materials and Nano Systems: Theory and Experiment (Part-1)
The Art of Nanomaterials
Nano Materials Induced Removal of Textile Dyes from Waste Water
Nanobiotechnology: Principles and Applications
Bio-Inspired Nanotechnology
Synthesis of Nanomaterials
Materials Science: A Field of Diverse Industrial Applications
Synthesis and Applications of Semiconductor Nanostructures
Industrial Applications of Polymer Composites