Abstract
In this chapter, we studied the device-level performance based on
electrostatic parameters of a source pocket engineered raised buried oxide (RBOX) SOI
tunnel field-effect transistor (SP-RBOX-SOITFET). Using Si1-xGex
pockets between the
channel and the source, steep subthreshold swing transistors can be obtained. In the
pocket, a narrow n+ region is formed by a tunneling junction between the p+
region of
the source. In order to reduce subthreshold swing, the tunneling width must be
narrowed, and the lateral electric field must be increased. So, the studied structure can
be used to design the dielectric modulated biomolecule biosensors for IOTs
applications. Simulation analyses of the proposed work has been conducted using the
Silvaco ATLAS TCAD tool.
Keywords: DC/RF parameters, Heterojunction, Internet of things (IOTs), SOI TFET, Si1-xGex , Source Pocket Engineered.
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