Next Generation High-Power Material Ga2O3 : Its Properties, Applications, and Challenges

Abstract

Gallium Oxide (Ga2O3 ) is an emerging semiconductor material that has gained significant attention in the field of electronics due to its unique properties and potential applications. Gallium Oxide has a very large bandgap of around 4.8-4.9 eV; this wide bandgap allows gallium oxide to withstand higher breakdown voltages and is well-suited for high-power switches, high-voltage rectifiers and inverters. Gallium oxide-based power electronics can operate at higher voltages and temperatures, enabling efficient energy conversion and reducing losses. In this book, we have discussed the physical properties, growth, and deposition methods along with the various applications of Gallium Oxide. We have even simulated a Gallium Oxide FINFET and discussed its electrical parameter’s behavior and various RFIC parameters for different fin widths.

Keywords: FINFET, Gallium oxide (Ga₂O₃ ), RFIC.

Cite as