Abstract
GaN-based High Electron Mobility Transistors are currently exhibiting
exceptional performance in areas that handle high power, high frequency, etc. In
particular, their outstanding electrical control characteristics that were demonstrated in
HEMT (High Electron Mobility Transistors) based on GaN material made them very
promising due to their fundamental and intrinsic unparalleled properties over the
existing technologies that use Si-based materials. When a technology enters the
manufacturing stage, reliability remains an important challenge. So, it is essential to
strongly encourage the knowledge database on the reliability of GaN-based HEMTs.
This study focuses on the primary issues that have impacted the reliability of GaNbased HEMTs in both the past and the present. The article focuses on the main
problems that have affected the dependability of GaN-based HEMTs both in the past
and present, followed by difficulties and potential future applications.
Keywords: 2DEG, Current collapse, GaN, HEMT, Polarization, Power, Reliability, Traps.
Related Journals
Related Books
Advanced Materials and Nano Systems: Theory and Experiment - Part 2
Advanced Materials and Nano Systems: Theory and Experiment (Part-1)
The Art of Nanomaterials
Nano Materials Induced Removal of Textile Dyes from Waste Water
Nanobiotechnology: Principles and Applications
Bio-Inspired Nanotechnology
Synthesis of Nanomaterials
Materials Science: A Field of Diverse Industrial Applications
Synthesis and Applications of Semiconductor Nanostructures
Industrial Applications of Polymer Composites