Nanoelectronic Devices and Applications

Study of DC Characteristics of AlGaN/GaN HEMT and its Compact Models

Author(s): G. Purnachandra Rao*, Tanjim Rahman and Trupti Ranjan Lenka

Pp: 130-147 (18)

DOI: 10.2174/9789815238242124010008

* (Excluding Mailing and Handling)

Abstract

In this chapter, studies of the DC characteristics of AlGaN/GaN HEMT (High Electron Mobility Transistor) and its compact model are presented. It includes the working principles of different HEMT models, their advantages, and their use in high-frequency and high-power applications. The chapter provides a distinct idea about the properties of different models (EE, ASM, and MVGS) and their DC characteristics, which are generated by the Advanced Design System (ADS). The performance analysis of the proposed HEMT models in terms of high electron mobility, high-power and high-frequency operation, low noise amplification, and high thermal stability, along with challenges and future scopes, is discussed in this chapter.


Keywords: ASM, EE, HEMT, Polarization, MVGS3e, 2DEG.

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