Abstract
High electron mobility transistors (HEMTs) and III-V compound materials
are the key research and development fields for developing improved high-power
solid-state devices and integrated circuits (ICs). GaN-based HEMTs have recently
gained popularity owing to their usage in high-power and high-frequency applications.
This chapter explains different types of heterostructures, principle operations, and basic
structures in detail, along with different types of HEMT structures. In order to
understand the operation and behavior of the High Electron Mobility Transistor
(HEMT) device, internal operation with in-depth analysis is very essential. Therefore,
the physics behind the operation of HEMT with proper analysis with the help of neat
illustrations is also discussed. Finally, the chapter concludes with a thorough analysis
of the breakthrough HEMT architecture and the difficulties posed by HEMTs.
Keywords: Heterojunction, HEMT, Polarization, III-Nitride, 2DEG.
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