Advancements in GaN Technologies: Power, RF, Digital and Quantum Applications

Quantum well devices based on III-V heterostructures outperform Field Effect Transistors (FETs) by harnessing the exceptional properties of the twodimensional electron gas (2DEG) in various material interface systems. In high-power electronics, III-V-based Gallium Nitride (GaN) HEMTs can have a great influence on the transport industry, consumer, RADAR, sensing systems, RF/ power electronics, and military systems. On the other hand, the devices made of HEMTs and MIS-HEMTs work in enhancement mode, having very low leakage current, which can conserve energy for more efficient power conversion, microwave/ power transistors and highspeed performance for wireless communication. The existing physics of the wellestablished AlGaN heterostructure system imposes constraints on the further progress of GaN-based HEMTs. Some of the scopes include: Initially, the semiconductor materials made of SiC, GaN, and AlGaN allow a device that is resistant to severe conditions, such as high-power /voltage-high temperature, to operate due to its effective dielectric constant and has a very good thermal conductivity, which makes this device well-suited for military applications. Secondly, with the urgent need for high-speed internet multimedia communication across the world, high transmission network capacity is required. GaN-based HEMT devices are suitable candidates for achieving high-speed limits, high gain and low noise performance. In conclusion, GaN and related interface materials exhibit chemical stability and act as robust semiconductors, exhibiting remarkable piezoelectric polarization effects that lead to a high-quality 2DEG. Integrating free-standing resonators with functionalized GaNbased 2DEG formation reveals the potential for designing advanced sensors.

Keywords: AlGaN, GaN, SiC, Power devices and switching, III-V materials.