Nanoscale Field Effect Transistors: Emerging Applications

FinFETs and their Applications

Author(s): Savitesh Madhulika Sharma* and Avtar Singh

Pp: 47-67 (21)

DOI: 10.2174/9789815165647123010006

* (Excluding Mailing and Handling)

Abstract

Researchers are motivated to develop novel electronic switches with improved low power properties and reduced short channel effects due to the downscaling of conventional MOSFETs (SCE). Using multi-gate FinFET technology could improve control of the gate over the channel charge. We have discussed FinFETs, or multigate transistors, in this chapter. The chapter will include the classification and detailed physics inside the device. The Fabrication section will explain the steps involved in manufacturing the device. The difficulties with FinFET technologies have also been discussed in order to examine the research gap. The performance improvement engineering techniques will give exposure to further improvement techniques in the device. The circuit applications will address the various analog/digital circuits based on FinFET. 


Keywords: DFFET, FiNFET, MultiGate transistor, Nanoscale, SOI, SCE.

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