Role of Nanomaterials: In Novel Semiconductor Field Effect Transistors

We are constantly looking to scale down the dimensions of transistors to increase density in the same specific area and at the same time, having powerful functions and increased performance. We have now reached the stage of submicron technology where MOSFETs (metal oxide semiconductor field effect transistors) and FinFETs (fin shaped field effect transistors) cannot be scaled down further. MOSFETs replaced BJTs decades ago, but now transistors seem to have hit their end. While semiconductor giants have a road map to produce 2 nm transistors, scaling down further is next to impossible. Later, FinFETs were considered as their 3-dimensional structure enabled greater density, greater computational power, and lower switching times. But scaling down also means more thermal generation. Thermal effects, high capacitances, and high fabrication costs deemed FinFETs not very suitable for scaling down beyond 7nm. How can we enable transistors to scale down further and follow Moore’s law? The next apparent step would be nanotechnology. While it could be a revolution in VLSI it comes with its own cons and challenges. While there is a lot of research going on regarding the same, this chapter will discuss types of nanomaterials based on dimensions like 0D, 1D, 2D, and 3D, and their respective roles in semiconductor FETs and why it is the next sensible step in the semiconductor industry. 

Keywords: Carbon nanotubes, Gate all around FETs, Light emitting FETs, Multi-bridge channel FETs, Nanomaterials, Nanowires, Nanosheets, Nanoparticles, Quantum dots, Semiconductor FETs.