Nanoelectronics Devices: Design, Materials, and Applications (Part I)

FinFET Advancements and Challenges: A State-of-the-Art Review

Author(s): Rahul Ghosh, Tanmoy Majumder, Abhishek Bhattacharjee* and Rupanjal Debbarma

Pp: 208-236 (29)

DOI: 10.2174/9789815136623123010011

* (Excluding Mailing and Handling)

Abstract

A review of the electrical and physical characteristics of FinFETs is presented here. This work focuses on the latest structures of FinFET according to its classifications and three-dimensional schematics. Through studying the output I-V characteristics, the transfer characteristics, and the subthreshold current in the FinFET channel, the electrical characteristics of FinFETs have been analyzed. Considerations were made of coulomb, phonon, and surface roughness scattering to examine effective charge carrier mobility in the FinFET channel. Lastly, in this chapter, the impact of the Fin layer shape on device performance is studied.


Keywords: Body-tied FinFETs, Drain-induced barrier lowering (DIBL), Electromigration, Fin-height, FinFETs, Matthiesen's rule, Phonon scattering, Short channel effect (SCE), Sub-threshold slope, Spacer length.

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