Impact of Electrode Length on I-V Characteristics to Linearity of TFET With Source Pocket

In this chapter, the author demonstrates a triple metal double gate TFET with a uniformly doped source pocket (TMG-SP-DG-TFET) to investigate the impact of triple metal length variation (Length of an electrode implanted above the oxide region) on the device performance. When the electrode length near the drain and source region varies, the electrostatic potential and electric field near the source-channel (SCi) and drain-channel interface (DCi) may vary accordingly. Due to these deviations, the tunneling improves or reduces for a moderately doped drain and a highly doped source region. Therefore, the ION (ON-state current) has shown significant functionalities with electrode length variation. This extensive study was carried out for the investigation of analog parameters, including EBD (ON/OFF state), Efield, Potential, gm (Trans-conductance), Cgs and Cgd (Gate-to-source and Gate-to-Drain capacitance), Maximum cut-off frequency (ft ), Gain bandwidth product (GBP), Transit Time (τ), with Linearity figure of merit that includes, gm2, gm3, VIP2 , VIP3 , IIP3 , IMD3 , and 1dB compression point. This comprehensive study shows that varying the length of the metal electrode with a fixed doping level of the source pocket will improve the overall performance of TMG-SP-DG-TFET.

Keywords: BTBT (Band-to-band-tunneling), EBD (Energy-Band-Diagram), Work-function (WF), Capacitance, Electric field (Efield), Linearity FOMs.