Nanoelectronics Devices: Design, Materials, and Applications Part II

Submonolayer InAs Quantum Dot Based Solar Cell: A New Approach Towards Intermediate Band Solar Cell

Author(s): Aishwarya Tomar, Satyendra K. Mourya and Rahul Kumar *

Pp: 406-432 (27)

DOI: 10.2174/9789815179361123010015

* (Excluding Mailing and Handling)


This chapter summarizes the progress of InAs submonolayer (SML) quantum dot (QD) based intermediate band solar cell (IBSC). A brief background of intermediate band solar cells (IBSC) will be presented. Different IBSC prototypes will be discussed. The importance of quantum dots (QDs) for IBSC prototyping will be illustrated. An alternative of the most extensively used Stranski-Krastanow (SK)-QDs named SML QDs will be introduced. The fabrication of SML-QD-based IBSC will be discussed from the material point of view. We will also discuss the physics behind the improved performance of these SCs. Important research in this field will be reviewed. Finally, the future direction will be suggested to further improve the performance.

Keywords: Efficiency, Intermediate band solar cell (IBSC), InAs, Quantum well, Quantum dot (QD), Solar cell, Sub-monolayer (SML), SK-QD, SML-QD, III-V semiconductors.

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