A Simulative Study on Electro-Optic Characteristics of InAlGaAs/InP for Fiber Optic-based Communications under Nanoscale Well Thickness Layers

The paramount goal of this fundamental explanatory book chapter has been to investigate a simulative study on EO (Electro-Optic) characteristics of InAlGAs/InP heterogeneous nanostructure for GFOCs (Graded Fiber Optic Cables) based SIL (Shortwave Infrared Light) communication systems under several numbers of NWTLs (Nanoscale Well Thickness Layers) in the photonic material based emerging nanotechnological sciences. The energy values in eV of C-V (Conduction-Valence) band offsets with SN (Step Normalized) width and the maximum value of quasi-Fermi energies in eV with various NWTLs have been illustrated graphically under the exploratory simulation in this chapter. Under this simulative investigation, the computational performances of SIL gain amplification with photon’s wavelength and values of carrier concentration per unit volume for several NWTLs have been properly calculated. Next, other various critical parameters such as modal confinement SIL gain amplification and A-G (Anti-Guiding) parameter with values of current per unit area of the cross-section for various values of NWTLs have been calculated cumulatively. Moreover, the performances of differential SIL gain amplification with carrier densities per cubic cm for various NWTLs have been illustrated. It has been distinguished by SIL gain spectra that the peaks of SIL gain spectra are enhanced with a decrease in the value of NWTLs and have been shifted towards the low value of the wavelength of lasing due to enhancement in energy separation values between quasi-Fermi energy levels. In the exploratory investigation through the results, the crest values of SIL gain amplification are ~ 6100/cm and ~ 5100/cm at the photon wavelengths ~ 1332 nm and 1553 nm respectively for 4 nm and 6 nm values of NWTLs. The SIL of maximum intensity emitted by the proposed heterogeneous junction based nanostructure of wavelengths ~ 1332 nm and 1553 nm has been largely utilized in the GFOCs-based SIL communication systems through the process of TIRs (Total Internal Reflections) with no attenuation loss of SIL signals in dB/km because of diminished net dispersions, scattering and net absorptions in the photonic material.

Keywords: A-G Parameter, C-V Energy Band Offsets, Differential SIL Gain Amplification, GFOCs, InAlGaAs, InP, Modal Confinement SIL Gain Amplification, Net SIL Gain Amplification, NWTLs, SIL Signal Loss, TIRs.