Synthesis of Probe-Shaped GaN Nanorods by Ammoniating Ga2O3/Mo Films

Title: Synthesis of Probe-Shaped GaN Nanorods by Ammoniating Ga2O3/Mo Films

Volume: 5 Issue: 3

Author(s): Qing-jun Xu, Shi-ying Zhang and Hui-zhao Zhuang

Affiliation:

Keywords: GaN nanorods, ammoniating, luminescence

Abstract: Probe-shaped GaN nanorods were successfully synthesized on Si(111) substrates through ammoniating Ga2O3/Mo films at 950 °C. X-ray diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) were used to characterize the as-synthesized nanorods. The results show that the synthesized sample is well crystallized GaN with hexagonal wurzite structure. And the GaN nanorods own probe-shaped morphology and smooth surface. X-ray photoelectron spectroscopy (XPS) confirms the formation of bonding between Ga and N and the surface stoichiometry of Ga:N of 1:1. The representative photoluminescence spectrum at room temperature exhibits a strong UV light emission band centered at 371.5 nm. Finally, the growth process of probe-shaped GaN nanorods was briefly discussed.

Cite this article as:

Xu Qing-jun, Zhang Shi-ying and Zhuang Hui-zhao, Synthesis of Probe-Shaped GaN Nanorods by Ammoniating Ga2O3/Mo Films, Current Nanoscience 2009; 5 (3) . https://dx.doi.org/10.2174/157341309788921426