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Research Article Section: Electronic and Crystal Structures

Electronic and Magnetic Properties of Eutectoid Growth Mn-rich Ge1-xMnx Dilute Magnetic Semiconductors

Author(s): Xiuxiu Zhang, Hui Su and Qinghua Liu*

Volume 2, Issue 2, 2022

Published on: 10 March, 2022

Page: [101 - 108] Pages: 8

DOI: 10.2174/2210298102666220128151100

Abstract

Background: Dilute magnetic semiconductors (DMSs) have attracted great attention in recent years due to their potential applications in spintronic devices.

Objective: This study aimed to investigate the magnetic and electronic properties of Mn-rich Ge semiconductors.

Methods: The magnetic and electronic properties of eutectoid growth Mn-rich Ge1-xMnx dilute magnetic semiconductors (DMSs) with a high Mn dopant close to the composition of Ge2Mn are investigated by the first-principles calculations.

Results: Using the diamond structure models of Ge24Mn8, Ge22Mn10, and Ge20Mn12, we show that the magnetic interactions of Mn atoms are dominated by ferrimagnetic coupling and that the Mn 3d states are substantially hybridized with the valence bands of the Ge matrix.

Conclusion: This indicates that Mn-rich Ge1-xMnx DMSs demonstrate a ferromagnetic and metallic character, and their carriers can mobilize in the lattice more freely. The present investigation could provide insights into understanding the nature of transition-metal-rich dilute magnetic semiconductors.

Keywords: Dilute magnetic semiconductors, electronic structure, band structure, doping, ferromagnetism, Mn dopant, Mn-rich.

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[1]
Wolf, S.A.; Awschalom, D.D.; Buhrman, R.A.; Daughton, J.M.; von Molnár, S.; Roukes, M.L.; Chtchelkanova, A.Y.; Treger, D.M. Spintronics: A spin-based electronics vision for the future. Science, 2001, 294(5546), 1488-1495.
[http://dx.doi.org/10.1126/science.1065389] [PMID: 11711666]
[2]
Ohno, H. Making nonmagnetic semiconductors ferromagnetic. Science, 1998, 281(5379), 951-955.
[http://dx.doi.org/10.1126/science.281.5379.951] [PMID: 9703503]
[3]
Yun, S.J.; Duong, D.L.; Ha, D.M.; Singh, K.; Phan, T.L.; Choi, W.; Kim, Y.M.; Lee, Y.H. Ferromagnetic order at room temperature in monolayer WSe2 semiconductor via vanadium dopant. Adv. Sci. (Weinh.), 2020, 7(9), 1903076.
[http://dx.doi.org/10.1002/advs.201903076] [PMID: 32382479]
[4]
Che, W.; Su, H.; Zhao, X.; Cheng, W.R.; Liu, Q.H. Dual manipulation of ferromagnetism in co-doped ZnO thin films by surfactant and n-type carriers. Chin. J. Chem. Phys., 2019, 32(4), 491-496.
[http://dx.doi.org/10.1063/1674-0068/cjcp1810220]
[5]
Parveen, B. Mahmood ul, H.; Khalid, Z.; Riaz, S.; Naseem, S. Room-temperature ferromagnetism in Ni-doped TiO2 diluted magnetic semiconductor thin films. J. Appl. Res. Technol., 2017, 15(2), 132-139.
[http://dx.doi.org/10.1016/j.jart.2017.01.009]
[6]
Cheng, Y.C.; Zhu, Z.Y.; Mi, W.B.; Guo, Z.B.; Schwingenschlögl, U. Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems. Phys. Rev. B Condens. Matter Mater. Phys., 2013, 87(10), 100401.
[http://dx.doi.org/10.1103/PhysRevB.87.100401]
[7]
Ando, K. Materials science. Seeking room-temperature ferromagnetic semiconductors. Science, 2006, 312(5782), 1883-1885.
[http://dx.doi.org/10.1126/science.1125461] [PMID: 16809516]
[8]
Ohno, Y.; Young, D.K.; Beschoten, B.; Matsukura, F.; Ohno, H.; Awschalom, D.D. Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature, 1999, 402(6763), 790-792.
[http://dx.doi.org/10.1038/45509]
[9]
Lin, L.; Huang, J.; Yu, W.; Tao, H.; Zhu, L.; Wang, P.; Zhang, Z.; Zhang, J. Electronic structures and magnetic properties of (Ni,Al) co-doped 4H-SiC: A first-principles study. Comput. Mater. Sci., 2018, 155, 169-174.
[http://dx.doi.org/10.1016/j.commatsci.2018.08.048]
[10]
Shinya, H.; Fukushima, T.; Masago, A.; Sato, K.; Katayama-Yoshida, H. First-principles calculations on the origin of ferromagnetism in transition-metal doped Ge. Phys. Rev. B, 2017, 96(10), 104415.
[http://dx.doi.org/10.1103/PhysRevB.96.104415]
[11]
Zhang, F.M.; Liu, X.C.; Gao, J.; Wu, X.S.; Du, Y.W.; Zhu, H.; Xiao, J.Q.; Chen, P. Investigation on the magnetic and electrical properties of crystalline Mn0.05Si0.95 films. Appl. Phys. Lett., 2004, 85(5), 786-788.
[http://dx.doi.org/10.1063/1.1775886]
[12]
Wu, H.; Hortamani, M.; Kratzer, P.; Scheffler, M. First-principles study of ferromagnetism in epitaxial Si-Mn thin films on Si(001). Phys. Rev. Lett., 2004, 92(23), 237202.
[http://dx.doi.org/10.1103/PhysRevLett.92.237202] [PMID: 15245192]
[13]
D’Orazio, F.; Lucari, F.; Pinto, N.; Morresi, L.; Murri, R. Toward room temperature ferromagnetism of Ge:Mn systems. J. Magn. Magn. Mater., 2004, 272, 2006-2007.
[http://dx.doi.org/10.1016/j.jmmm.2004.01.014]
[14]
Dietl, T. Ferromagnetic semiconductors. Semicond. Sci. Technol., 2002, 17(4), 377-392.
[http://dx.doi.org/10.1088/0268-1242/17/4/310]
[15]
Dietl, T.; Ohno, H.; Matsukura, F. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors. Phys. Rev. B Condens. Matter Mater. Phys., 2001, 63(19), 195205.
[http://dx.doi.org/10.1103/PhysRevB.63.195205]
[16]
Park, Y.D.; Hanbicki, A.T.; Erwin, S.C.; Hellberg, C.S.; Sullivan, J.M.; Mattson, J.E.; Ambrose, T.F.; Wilson, A.; Spanos, G.; Jonker, B.T. A group-IV ferromagnetic semiconductor: MnxGe1-x. Science, 2002, 295(5555), 651-654.
[http://dx.doi.org/10.1126/science.1066348] [PMID: 11809964]
[17]
Tsui, F.; He, L.; Ma, L.; Tkachuk, A.; Chu, Y.S.; Nakajima, K.; Chikyow, T. Novel germanium-based magnetic semiconductors. Phys. Rev. Lett., 2003, 91(17), 177203.
[http://dx.doi.org/10.1103/PhysRevLett.91.177203] [PMID: 14611374]
[18]
Devillers, T.; Jamet, M.; Barski, A.; Poydenot, V.; Bayle-Guillemaud, P.; Bellet-Amalric, E.; Cherifi, S.; Cibert, J. Structure and magnetism of self-organizedGe1−xMnxnanocolumns on Ge(001). Phys. Rev. B Condens. Matter Mater. Phys., 2007, 76(20), 205306.
[http://dx.doi.org/10.1103/PhysRevB.76.205306]
[19]
Ayoub, J.P.; Favre, L.; Berbezier, I.; Ronda, A.; Morresi, L.; Pinto, N. Morphological and structural evolutions of diluted Ge1−xMnx epitaxial films. Appl. Phys. Lett., 2007, 91(14), 141920.
[http://dx.doi.org/10.1063/1.2794723]
[20]
Verna, A.; Ottaviano, L.; Passacantando, M.; Santucci, S.; Picozzi, P.; D’Orazio, F.; Lucari, F.; De Biase, M.; Gunnella, R.; Berti, M.; Gasparotto, A.; Impellizzeri, G.; Priolo, F. Ferromagnetism in ion implanted amorphous and nanocrystalline MnxGe1−x. Phys. Rev. B Condens. Matter Mater. Phys., 2006, 74(8), 085204.
[http://dx.doi.org/10.1103/PhysRevB.74.085204]
[21]
Jamet, M.; Barski, A.; Devillers, T.; Poydenot, V.; Dujardin, R.; Bayle-Guillemaud, P.; Rothman, J.; Bellet-Amalric, E.; Marty, A.; Cibert, J.; Mattana, R.; Tatarenko, S. High-curie-temperature ferromagnetism in self-organized Ge1-xMnx nanocolumns. Nat. Mater., 2006, 5(8), 653-659.
[http://dx.doi.org/10.1038/nmat1686] [PMID: 16845420]
[22]
Weng, H.; Dong, J. First-principles investigation of transition-metal-doped group-IV semiconductors: RxY1−x (R=Cr, Mn, Fe; Y=Si, Ge). Phys. Rev. B Condens. Matter Mater. Phys., 2005, 71(3), 035201.
[http://dx.doi.org/10.1103/PhysRevB.71.035201]
[23]
Stroppa, A.; Picozzi, S.; Continenza, A.; Freeman, A.J. Electronic structure and ferromagnetism of Mn-doped group-IV semiconductors. Phys. Rev. B Condens. Matter Mater. Phys., 2003, 68(15), 155203.
[http://dx.doi.org/10.1103/PhysRevB.68.155203]
[24]
Zhou, X.H.; Chen, X.S.; Guo, X.G.; Sun, L.Z.; Sun, Y.L.; Lu, W. Ferromagnetism of 3d-impurities substituted in Ge. J. Magn. Magn. Mater., 2004, 284, 253-259.
[http://dx.doi.org/10.1016/j.jmmm.2004.06.043]
[25]
Zhao, Y.J.; Shishidou, T.; Freeman, A.J. Ruderman-Kittel-Kasuya-Yosida-like ferromagnetism in MnxGe1-x. Phys. Rev. Lett., 2003, 90(4), 047204.
[http://dx.doi.org/10.1103/PhysRevLett.90.047204] [PMID: 12570455]
[26]
Miura, Y.; Shirai, M.; Nagao, K. First-principles design of ferromagnetic nanostructures based on group-IV semiconductors. J. Phys. Condens. Matter, 2004, 16(48), S5735-S5738.
[http://dx.doi.org/10.1088/0953-8984/16/48/038]
[27]
Continenza, A.; Profeta, G.; Picozzi, S. Transition metal doping and clustering in Ge. Appl. Phys. Lett., 2006, 89(20), 202510.
[http://dx.doi.org/10.1063/1.2388894]
[28]
Kresse, G.; Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B Condens. Matter, 1996, 54(16), 11169-11186.
[http://dx.doi.org/10.1103/PhysRevB.54.11169] [PMID: 9984901]
[29]
Blöchl, P.E. Projector augmented-wave method. Phys. Rev. B Condens. Matter, 1994, 50(24), 17953-17979.
[http://dx.doi.org/10.1103/PhysRevB.50.17953] [PMID: 9976227]
[30]
Kohn, W.; Sham, L.J. Self-consistent equations including exchange and correlation effects. Phys. Rev., 1965, 140(4A), A1133-A1138.
[http://dx.doi.org/10.1103/PhysRev.140.A1133]
[31]
Perdew, J.P.; Wang, Y. Accurate and simple analytic representation of the electron-gas correlation energy. Phys. Rev. B Condens. Matter, 1992, 45(23), 13244-13249.
[http://dx.doi.org/10.1103/PhysRevB.45.13244] [PMID: 10001404]
[32]
Wang, Y.; Perdew, J.P. Correlation hole of the spin-polarized electron gas, with exact small-wave-vector and high-density scaling. Phys. Rev. B Condens. Matter, 1991, 44(24), 13298-13307.
[http://dx.doi.org/10.1103/PhysRevB.44.13298] [PMID: 9999531]
[33]
Monkhorst, H.J.; Pack, J.D. Special points for Brillouin-zone integrations. Phys. Rev. B, 1976, 13(12), 5188-5192.
[http://dx.doi.org/10.1103/PhysRevB.13.5188]
[34]
Makov, G.; Shah, R.; Payne, M.C. Periodic boundary conditions in ab initio calculations. II. Brillouin-zone sampling for aperiodic systems. Phys. Rev. B Condens. Matter, 1996, 53(23), 15513-15517.
[http://dx.doi.org/10.1103/PhysRevB.53.15513] [PMID: 9983382]
[35]
Liu, Q.; Yan, W.; Wei, H.; Sun, Z.; Pan, Z.; Soldatov, A.V.; Mai, C.; Pei, C.; Zhang, X.; Jiang, Y.; Wei, S. Energetic stability, electronic structure, and magnetism in Mn-doped silicon dilute magnetic semiconductors. Phys. Rev. B Condens. Matter Mater. Phys., 2008, 77(24), 245211.
[http://dx.doi.org/10.1103/PhysRevB.77.245211]
[36]
Ottaviano, L.; Passacantando, M.; Picozzi, S.; Continenza, A.; Gunnella, R.; Verna, A.; Bihlmayer, G.; Impellizzeri, G.; Priolo, F. Phase separation and dilution in implanted MnxGe1−x alloys. Appl. Phys. Lett., 2006, 88(6), 061907.
[http://dx.doi.org/10.1063/1.2171485]
[37]
Kazakova, O.; Kulkarni, J.S.; Holmes, J.D.; Demokritov, S.O. Room-temperature ferromagnetism in Ge1−xMnx nanowires. Phys. Rev. B Condens. Matter Mater. Phys., 2005, 72(9), 094415.
[http://dx.doi.org/10.1103/PhysRevB.72.094415]

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