In this study, a heterodielectric BOX (HDB) Nanoribbon FET (NR-FET) is
built using the TCAD device simulator to reduce the effect of trap charges on
numerous electrical properties in traditional NR-FETs. Initially, a reasonable study in
terms of transfer characteristics of NR-FET is highlighted between homodielectric and
HD BOX. Because of the existence of high-k dielectric below the drain area, it is
assumed that the impact of trap charges is insignificant in HDB NR-FET. Furthermore,
the trap charge effect on transconductance (gm
), total gate capacitance (Cgg), and cut-off
frequency (fc
) in HDB NR-FETs are investigated. Higher-order harmonics of gm
(gm2
and gm3) and linearity parameters are studied for HDB NR-FET in a series of steps.
Finally, the effect of temperature on input characteristics, gm
, Cgg, fc
, gm2, gm3, and
linearity behavior for HDB NR-FET is investigated in the presence of trap charges.
Keywords: BOX thickness, DC parameters, Heterodielectric BOX, Homodielectric NRFET, Linearity performance, Nano ribbon FET, RF/analog parameters, TCAD simulator, Temperature, Trap charge.
