A review of the electrical and physical characteristics of FinFETs is
presented here. This work focuses on the latest structures of FinFET according to its
classifications and three-dimensional schematics. Through studying the output I-V
characteristics, the transfer characteristics, and the subthreshold current in the FinFET
channel, the electrical characteristics of FinFETs have been analyzed. Considerations
were made of coulomb, phonon, and surface roughness scattering to examine effective
charge carrier mobility in the FinFET channel. Lastly, in this chapter, the impact of the
Fin layer shape on device performance is studied.
Keywords: Body-tied FinFETs, Drain-induced barrier lowering (DIBL), Electromigration, Fin-height, FinFETs, Matthiesen's rule, Phonon scattering, Short channel effect (SCE), Sub-threshold slope, Spacer length.
