In this chapter, the author demonstrates a triple metal double gate TFET
with a uniformly doped source pocket (TMG-SP-DG-TFET) to investigate the impact
of triple metal length variation (Length of an electrode implanted above the oxide
region) on the device performance. When the electrode length near the drain and source
region varies, the electrostatic potential and electric field near the source-channel (SCi)
and drain-channel interface (DCi) may vary accordingly. Due to these deviations, the
tunneling improves or reduces for a moderately doped drain and a highly doped source
region. Therefore, the ION (ON-state current) has shown significant functionalities with
electrode length variation. This extensive study was carried out for the investigation of
analog parameters, including EBD (ON/OFF state), Efield, Potential, gm
(Trans-conductance), Cgs and Cgd (Gate-to-source and Gate-to-Drain capacitance), Maximum
cut-off frequency (ft
), Gain bandwidth product (GBP), Transit Time (τ), with Linearity
figure of merit that includes, gm2, gm3, VIP2
, VIP3
, IIP3
, IMD3
, and 1dB compression
point. This comprehensive study shows that varying the length of the metal electrode
with a fixed doping level of the source pocket will improve the overall performance of
TMG-SP-DG-TFET.
Keywords: BTBT (Band-to-band-tunneling), EBD (Energy-Band-Diagram), Work-function (WF), Capacitance, Electric field (Efield), Linearity FOMs.
