In this chapter, we derive the operational characteristics of quantum heat
converter and a quantum injection device, as functions of the semiconductor structures.
We describe the couplings of the active electrons with the superradiant field, the crystal
vibrations, and the quasi-free electrons and holes in the conduction regions. The
dissipative couplings of the electromagnetic field with the optical vibrations and the
quasi-free conduction electrons and holes are taken into consideration according to the
results obtained in the first volume. The superradiant power of a quantum heat
converter under the action of a current injected in the device, and the electric current
generated by a quantum injection device under the action of an incident
electromagnetic field are entirely obtained as functions of the physical characteristics
and universal constants. We perform numerical calculations for semiconductor
structures providing electromagnetic and electric powers of practical interest. Both
possible semiconductor configurations, the longitudinal configuration, with the field
propagating in the direction of the injected current, and the transversal one, with the
field propagating perpendicularly to the injected current, are taken into account.
Keywords: Cavity eigenmode, Commutation relation, Correlated transitions,
Coupling coefficient, Creation-annihilation operators, Deep-level path, Elasticity
coefficient, Fabry-Perot cavity, Harmonic oscillator, Hermitian matrix, Impurity
cluster, Maxwell-Bloch equations, Optical vibration, Polarization, Population,
Quantum injection dot, Sound velocity, Superradiant field, Superradiant junction,
Vibrational field.
