In the present research, a β-Ga2O3
high electron mobility transistor is
proposed for investigating the implementation of high-k dielectric materials. The
implementation of the dielectrics, Si3N4
, Al2O3
, and HfO2, at the interface of aluminum
nitride (AlN) and the gate is depicted to determine the optimal selection. The novelty of
the device lies in the highly doped n+ material with a broader gap between ohmic
contact and the barrier layers. The performance is computed regarding the transfer and
output characteristics, transconductance, gate capacitance, 2nd and 3rd-order
transconductance, sub-threshold voltage, on-resistance and output conductance. The
crucial parameters for switching and linearity performance are also assessed. The
results demonstrate significant improvements in dynamic and access resistance, leading
to a remarkably high transconductance (Gm
) value of 0.15 S/µm and a peak drain
current density of 650 A/mm at Vds = 5 V. These promising results pave the way for
potential applications in high-power radio frequency and microwave devices, making
the proposed device a promising candidate for future advancements in these fields.
Keywords: Aluminum nitride (AlN), Buffer layer, Dielectric, Gallium Oxide(Ga2O3 ), HEMT.
