Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices

Investigation of Electrical Properties of Active Elements Based on Silicon and A2B6-A4B6 Group Materials

Author(s): Halyna Khlyap

Pp: 33-51 (19)

DOI: 10.2174/978160805021510901010033

* (Excluding Mailing and Handling)


Charge transport mechanisms and photosensitivity of amorhous silicon thin films prepared by magnetron sputtering are investigated at room temperature. The power law and the power-exponential laws governing the currents observed experimentally are revealed. The near-IR photosensitivity of the films can be sufficiently improved by means of high-temperature hydrogenation. Important properties of heterostructures based on PbS, ZnSe, ZnTe and CdTe semiconductors are also discussed along with the results of numerical analysis of experimental data.

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