A Dual Side Electroluminescence Measurement System for LED Wafer Manufacturing

ISSN: 1877-6124 (Online)
ISSN: 2210-6863 (Print)


Volume 4, 2 Issues, 2014


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Editor-in-Chief:
Zeev Zalevsky
School of Engineering
Bar-Ilan University
Ramat-gan
Israel


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A Dual Side Electroluminescence Measurement System for LED Wafer Manufacturing

Author(s): H.- T. Kim, J. Kim, S. Kim, H.- K. Yuh, D.- H. Kim, D.- H. Ahn and D.- S. Shin

Affiliation: Smart System Research Group, KITECH, 35-3, HongCheon, IpJang, CheonAn, ChungNam 331-825, Korea.

Abstract

A measurement system is presented for evaluating the characteristics of both sides of an LED wafer using electroluminescence (EL). Integrating spheres (IS), photodiodes, pico-ammeters, spectrometers were installed in the front and rear sides to measure optical characteristics with minimum EL loss. A probe was connected to a source meter with a thin wire and attached using a transparent fixture in the front IS. The EL characteristics in a measuring point were peak wavelength, FWHM (full width at half maximum), forward current, forward voltage and reverse current. EL images were created by combining the motion of a stage and the EL characteristics. The correlation between the EL and the chip-level tests and the repeatability test showed that the dual measurement is useful for LED manufacturing. Our patents were applied to install the probe and create the EL image.

Keywords: Electroluminescence, EL imaging, epi-wafer, Optical spectrum, LED manufacturing.

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Article Details

Volume: 3
Issue Number: 1
First Page: 49
Last Page: 55
Page Count: 7
DOI: 10.2174/2210686311303010007
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