Novel Iron-oxide Catalyzed CNT Formation on Semiconductor Silicon Nanowire
Tijjani Adam and U. HAshimAffiliation:
Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis, Malaysia.
AbstractAn aqueous(Fe(NO3)3.9H2O) and MgOwere mixed and deposited on SiNWs, the CNTs formed by Fe3O4/MgO catalysts concentration with the mole ratio set at 0.15:9.85 and 6000C had diameter between 15.23 to 90nm with high-density distribution ofCNT while the 0.45:9.55 and 7300C had diameter of 100 to 230nm. The UV/Vis/NIR and FT-IR spectroscopes clearly confirm the present of the silicon-CNTs hybrid structure. UV/Vis/NIR, FT-IR spectra and FESEM images confirmed the silicon-CNT structure exists with diameters ranging between 15-230nm. Thus, the study demonstrated cost effective method of silicon-CNT composite nanowire formation via Iron-oxide Catalyze synthesis.
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