Novel Iron-oxide Catalyzed CNT Formation on Semiconductor Silicon Nanowire

ISSN: 1875-6786 (Online)
ISSN: 1573-4137 (Print)

Volume 10, 6 Issues, 2014

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Novel Iron-oxide Catalyzed CNT Formation on Semiconductor Silicon Nanowire

Author(s): Tijjani Adam and U. HAshim

Affiliation: Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis, Malaysia.


An aqueous(Fe(NO3)3.9H2O) and MgOwere mixed and deposited on SiNWs, the CNTs formed by Fe3O4/MgO catalysts concentration with the mole ratio set at 0.15:9.85 and 6000C had diameter between 15.23 to 90nm with high-density distribution ofCNT while the 0.45:9.55 and 7300C had diameter of 100 to 230nm. The UV/Vis/NIR and FT-IR spectroscopes clearly confirm the present of the silicon-CNTs hybrid structure. UV/Vis/NIR, FT-IR spectra and FESEM images confirmed the silicon-CNT structure exists with diameters ranging between 15-230nm. Thus, the study demonstrated cost effective method of silicon-CNT composite nanowire formation via Iron-oxide Catalyze synthesis.

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Article Details

Volume: 10
First Page: 1
Last Page: 1
Page Count: 1
DOI: 10.2174/1573413710666140701184953

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