Symmetrical Dipole Contribution from Planar Defects on m-plane ZnO Epitaxial Films

ISSN: 1875-6786 (Online)
ISSN: 1573-4137 (Print)

Volume 11, 6 Issues, 2015

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Symmetrical Dipole Contribution from Planar Defects on m-plane ZnO Epitaxial Films

Current Nanoscience, 10(6): 883-888.

Author(s): Chung-Wei Liu, Shoou-Jinn Chang, Yen-Teng Ho, Li Chang, Kuang-Yao Lo and Sanjaya Brahma.

Affiliation: Department of Physics, National Cheng Kung University, Tainan 701, Taiwan.


The planar defects such as basal stacking faults (BSFs) are probed on m-plane ZnO grown on LaAlO3(112) substrate by reflective second harmonic generation (RSHG). The BSFs result in nonvanishing single-direction dipoles that behave similar to a mirror-like symmetrical dipole. The RSHG pattern from m-plane ZnO comprised of not only the bulk dipole contribution of ZnO but also an additional mirror-like symmetrical dipole contribution from BSF defects. Transmission electron microscopy image displays the presence of BSFs that lie in the c-plane of ZnO and agrees well with RSHG results. Planar BSFs are formed due to the anisotropic stress relaxation between m-plane ZnO film and LaAlO3(112) substrate, resulting in higher-quality m-plane ZnO films.


Basal stacking fault, non-polar plane, second harmonic generation, ZnO.

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Article Details

Volume: 10
Issue Number: 6
First Page: 883
Last Page: 888
Page Count: 6
DOI: 10.2174/1573413710666140526233427

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