Symmetrical Dipole Contribution from Planar Defects on M-Plane ZnO Epitaxial Films

ISSN: 1875-6786 (Online)
ISSN: 1573-4137 (Print)


Volume 10, 6 Issues, 2014


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Symmetrical Dipole Contribution from Planar Defects on M-Plane ZnO Epitaxial Films

Author(s): Chung-Wei Liu, Shoou-Jinn Chang, Yen-Teng Ho, Sanjaya Brahma, Li Chang and Kuang-Yao Lo

Affiliation: Institute of Microelectronics & Department of Electrical Engineering and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan.

Abstract

The planar defects such as basal stacking faults (BSFs) are probed on m-plane ZnO grown on LaAlO3(112) substrate by reflective second harmonic generation (RSHG). The BSFs result nonvanishing single-direction dipoles that behave similar to a mirror-like symmetrical dipole. The RSHG pattern from m-plane ZnO comprised of not only the bulk dipole contribution of ZnO but also an additional mirror-like symmetrical dipole contribution from BSF defects. Transmission electron microscopy image displays the presence of BSFs that lie in the c-plane of ZnO and agrees well with RSHG results. Planar BSFs are formed due to the anisotropic stress relaxation between m-plane ZnO film and LaAlO3(112) substrate, resulting in higher-quality m-plane ZnO films.


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Article Details

Volume: 10
First Page: 1
Last Page: 1
Page Count: 1
DOI: 10.2174/1573413710666140526233427
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